Low RDS ON N Channel MOSFET HUASHUO HSM6056 Suitable for DC DC Converters and Switching Applications
Key Attributes
Model Number:
HSM6056
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
1.27nF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSM6056
Package:
SOP-8
Product Description
Product Overview
The HSM6056 is an N-Channel MOSFET designed for fast switching applications, featuring 60V drain-source voltage and advanced trench MOS technology. It offers low gate charge and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. This device is 100% EAS guaranteed and available in a green device option.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: N-Channel MOSFET
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | 15 | A | |||
| ID@TC=100 | Continuous Drain Current1 | 11 | A | |||
| IDM | Pulsed Drain Current2 | 56 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 26.5 | mJ | |||
| IAS | Avalanche Current | 23 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 3.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 75 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 40 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=15A | 7.2 | 8.5 | m | |
| VGS=4.5V , ID=10A | 11.5 | 14.5 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.3 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=15A | 15 | --- | nC | |
| Qgs | Gate-Source Charge | 3.5 | --- | |||
| Qgd | Gate-Drain Charge | 4.2 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=15A | 7 | --- | ns | |
| Tr | Rise Time | 4.5 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 26 | --- | ns | ||
| Tf | Fall Time | 5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 1270 | --- | pF | |
| Coss | Output Capacitance | 478 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 40 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 5 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | --- | 1 | V | |
| Product Summary | ||||||
| Model | HSM6056 | |||||
| Type | N-Ch 60V Fast Switching MOSFETs | |||||
| Applications | Motor Control, DC/DC Converter, Synchronous rectifier applications | |||||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSM6056 | SOP-8 | 2500/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=23A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121653_HUASHUO-HSM6056_C2903556.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
