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quality Trench Technology N channel MOSFET HUASHUO HSU15N10 Designed for Synchronous Buck Converter Circuits factory
quality Trench Technology N channel MOSFET HUASHUO HSU15N10 Designed for Synchronous Buck Converter Circuits factory

Trench Technology N channel MOSFET HUASHUO HSU15N10 Designed for Synchronous Buck Converter Circuits

Key Attributes
Model Number: HSU15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.135nF
Pd - Power Dissipation:
41W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
HSU15N10
Package:
TO-252
Product Description

Product Overview

The HSU15N10 is a high-performance N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It features extreme high cell density, providing excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Technology: Trench
  • Channel Type: N-Channel

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 15 A
ID@TC=70 Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 60 A
EAS Single Pulse Avalanche Energy 3.2 mJ
IAS Avalanche Current 8 A
PD@TC=25 Total Power Dissipation 41 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient --- 50 /W
RJC Thermal Resistance Junction-Case --- 3 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.06 --- V/
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=15A --- 65 90 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=10A --- 75 100 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.8 2.5 V
VGS(th) VGS(th) Temperature Coefficient --- -6 --- mV/
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A --- 15 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3 ---
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=5A --- 12 --- nC
Qgs Gate-Source Charge --- 2.9 ---
Qgd Gate-Drain Charge --- 1.8 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3 ID=5A --- 3.9 --- ns
Tr Rise Time --- 26 --- ns
Td(off) Turn-Off Delay Time --- 16 --- ns
Tf Fall Time --- 8.6 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1135 --- pF
Coss Output Capacitance --- 60 --- pF
Crss Reverse Transfer Capacitance --- 37 --- pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current --- --- 14.6 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
Ordering Information
Part Number Package code Packaging
HSU15N10 TO-252 2500/Tape&Reel

2409291004_HUASHUO-HSU15N10_C22359252.pdf

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