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quality P channel MOSFET 40V HUASHUO HSH110P04 with fast switching speed and low gate charge characteristics factory
quality P channel MOSFET 40V HUASHUO HSH110P04 with fast switching speed and low gate charge characteristics factory

P channel MOSFET 40V HUASHUO HSH110P04 with fast switching speed and low gate charge characteristics

Key Attributes
Model Number: HSH110P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
722pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.09nF@20V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSH110P04
Package:
TO-263
Product Description

Product Overview

The HSH110P04 is a P-channel, 40V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch MOSFET
  • Voltage Rating: 40V
  • Switching Speed: Fast Switching
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSH110P04 Drain-Source Voltage (VDS) -40 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID@TC=25) VGS @ -10V -110 A
Continuous Drain Current (ID@TC=100) VGS @ -10V -70 A
Pulsed Drain Current (IDM) -295 A
Single Pulse Avalanche Energy (EAS) 380 mJ
Avalanche Current (IAS) -50 A
Total Power Dissipation (PD@TC=25) 200 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- 62 /W
Thermal Resistance Junction-Case (RJC) --- 0.81 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA -40 --- --- V
HSH110P04 Static Drain-Source On-Resistance (RDS(ON),max) VGS=-10V , ID=-110A 5.8 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=-10V , ID=-20A 5.3 5.8 m
HSH110P04 Static Drain-Source On-Resistance (RDS(ON)) VGS=-4.5V , ID=-10A 7.0 9.1 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA -1.2 -1.8 -2.5 V
HSH110P04 Drain-Source Leakage Current (IDSS) VDS=-32V , VGS=0V , TJ=25 --- 1 uA
Drain-Source Leakage Current (IDSS) VDS=-32V , VGS=0V , TJ=55 --- 5 uA
HSH110P04 Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- 100 nA
HSH110P04 Forward Transconductance (gfs) VDS=-15V , ID=-18A 50 --- S
HSH110P04 Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz 7 14
HSH110P04 Total Gate Charge (Qg) VDS=-20V , VGS=-10V , ID=-12A 115 --- nC
HSH110P04 Gate-Source Charge (Qgs) 24 ---
HSH110P04 Gate-Drain Charge (Qgd) 26 ---
HSH110P04 Turn-On Delay Time (td(on)) VDD=-20V , VGS=-10V , RG=3, ID=-12A 19 --- ns
HSH110P04 Rise Time (tr) 12 --- ns
HSH110P04 Turn-Off Delay Time (td(off)) 80 --- ns
HSH110P04 Fall Time (tf) 18 --- ns
HSH110P04 Input Capacitance (Ciss) VDS=-20V , VGS=0V , f=1MHz 7090 --- pF
HSH110P04 Output Capacitance (Coss) 930 --- pF
HSH110P04 Reverse Transfer Capacitance (Crss) 722 --- pF
HSH110P04 Continuous Source Current (IS) VG=VD=0V , Force Current --- -100 A
HSH110P04 Diode Forward Voltage (VSD) VGS=0V , IS=-1A , TJ=25 --- -1.2 V

2410121631_HUASHUO-HSH110P04_C7543770.pdf
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