60V fast switching P channel MOSFET HUASHUO HSH6117 trench technology for synchronous buck converters
Key Attributes
Model Number:
HSH6117
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
241pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.635nF@30V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSH6117
Package:
TO-263
Product Description
Product Overview
The HSH6117 is a P-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSH
- Product Type: P-Channel MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -80 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -45 | A | |||
| IDM | Pulsed Drain Current2 | -170 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 330 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.81 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 14 | m | |
| VGS=-4.5V , ID=-12A | --- | 17 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 4.28 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 43 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.6 | --- | ||
| Qg | Total Gate Charge | VDS=-30V , VGS=-10V , ID=-12A | 85 | --- | nC | |
| Qgs | Gate-Source Charge | 11 | --- | |||
| Qgd | Gate-Drain Charge | 30 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6, ID=-1A | 18 | --- | ns | |
| Tr | Rise Time | 12 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 100 | --- | ns | ||
| Tf | Fall Time | 68 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | 4635 | --- | pF | |
| Coss | Output Capacitance | 524 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 241 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -40 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
2410121630_HUASHUO-HSH6117_C5341709.pdf
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