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quality Microtriggered thyristor HTCSEMI HT03ARTZ designed for in leakage protectors timers and gas igniters factory
quality Microtriggered thyristor HTCSEMI HT03ARTZ designed for in leakage protectors timers and gas igniters factory

Microtriggered thyristor HTCSEMI HT03ARTZ designed for in leakage protectors timers and gas igniters

Key Attributes
Model Number: HT03ARTZ
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
100uA
Voltage - On State(Vtm):
1.8V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
470mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
HT03ARTZ
Package:
TO-92-3L
Product Description

HT03A Thyristor

The HT03A is a microtriggered low power thyristor designed for applications such as leakage protectors, timers, and gas igniters. It features non-insulated and glass passivation types, offering reliable performance in demanding environments.

Product Attributes

  • Brand: HT03A
  • Package Types: SOP-8 (R SUFFIX), MSOP-8 (M SUFFIX), DFN-8* (D SUFFIX), TO92 (M SUFFIX), TO-92-3L (T SUFFIX)

Technical Specifications

Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.47 A Commercial frequency, sine half wave 180 conduction, Ta = 47C
Average on-state current IT (AV) 0.3 A Commercial frequency, sine half wave 180 conduction, Ta = 47C
Surge on-state current ITSM 20 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive
I2t for fusing I2t 1.6 A2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj 40 to +110 C
Storage temperature Tstg 40 to +125 C
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse voltage VRSM 800 V
DC reverse voltage VR(DC) 480 V
Repetitive peak off-state voltage VDRM 600 V Note1
Non-repetitive peak off-state voltage VDSM 800 V Note1
DC off-state voltage VD(DC) 480 V Note1
Repetitive peak reverse current IRRM 0.1 mA Tj = 110C, VRRM applied
Repetitive peak off-state current IDRM 0.1 mA Tj = 110C, VDRM applied, RGK = 1 k
On-state voltage VTM 1.8 V Ta = 25C, ITM = 4 A, instantaneous value
Gate trigger voltage VGT 0.8 V Tj = 25C, VD = 6 V, IT = 0.1 A (Note3)
Gate non-trigger voltage VGD 0.2 V Tj = 110C, VD = 1/2 VDRM, RGK = 1 k
Gate trigger current IGT 100 A Tj = 25C, VD = 6 V, IT = 0.1 A (Note3)
Holding current IH 3 mA Tj = 25C, VD = 12 V, RGK = 1 k
Thermal resistance Rth (j-a) 180 C/W Junction to ambient

Notes: 1. With gate to cathode resistance RGK = 1 k. 2. Please refer to the last letter of the model on the label for IGT value. If special IGT values are required, select item D or E in the table below. If you need a specified IGT value, contact the manufacturer. Item A B C D E IGT (A) 10 to 20 20 to 30 30 to 40 10 to 40 1 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3 IGT, VGT measurement circuit.


2410121251_HTCSEMI-HT03ARTZ_C2998011.pdf

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