HUAKE SMF5N60 600V N Channel MOSFET optimized for high frequency switching and power factor correction
Key Attributes
Model Number:
SMF5N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-40℃~+150℃
RDS(on):
1.9Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
568pF@25V
Pd - Power Dissipation:
35W
Mfr. Part #:
SMF5N60
Package:
TO-220F
Product Description
Product Overview
The SMF5N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a continuous drain current of 5.0A, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Model: SMF5N60
- Voltage Rating: 600V
- Package Type: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 5.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 3.1* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 20* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Note2) | EAS | 245 | mJ | |||
| Avalanche Current (Note1) | IAR | 5.0 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 10.5 | mJ | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation (TC =25C) | PD | 35 | W | |||
| Derate above 25C | 0.27 | W/C | ||||
| Operating Junction Temperature | Tj | -55 | 150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 3.57 | C /W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C /W | |||
| Off Characteristics | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 600 | -- | -- | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | -- | 0.65 | -- | V/C |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V,Tc=125C | -- | -- | 10 | A |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=2.5A | -- | 1.9 | 2.5 | |
| Forward Transconductance | gFS | VDS=40 V, ID=2.0A (Note4) | -- | 3.6 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 568 | -- | pF |
| Output Capacitance | Coss | -- | 63 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 11 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 300 V, ID = 5.0 A, RG = 25 (Note4,5) | -- | 31 | -- | ns |
| Turn-On Rise Time | tr | -- | 76 | -- | ns | |
| Turn-Off Delay Time | td(off) | -- | 61 | -- | ns | |
| Turn-Off Fall Time | tf | -- | 56 | -- | ns | |
| Total Gate Charge | Qg | VDS = 480 V, ID =5.0 A, VGS = 10 V (Note4,5) | -- | 13 | -- | nC |
| Gate-Source Charge | Qgs | -- | 4.1 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 4.9 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -- | -- | 5.0 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -- | -- | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=4.0A | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS =0V, IS=4.0A, d IF /dt=100A/s (Note4) | -- | 332 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 2.69 | -- | C | |
2410122013_HUAKE-SMF5N60_C570136.pdf
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