Power Conversion MOSFET HUASHUO HSBB3060 Featuring N Channel Fast Switching and 45A Continuous Current
Key Attributes
Model Number:
HSBB3060
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.8mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
28pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
562pF@15V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
HSBB3060
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3060 is a high-performance N-Channel Fast Switching MOSFET designed for efficient power management. Featuring a 30V Drain-Source Voltage and a continuous drain current of up to 45A, this MOSFET is ideal for applications such as power management in desktop computers, DC/DC converters in telecom and industrial sectors, and isolated DC/DC converters. It boasts advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. The device is 100% EAS guaranteed and available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Line: HSBB
- Technology: Trench
- Channel Type: N-Channel
- Switching Speed: Fast
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 45 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 28 | A | |||
| IDM | Pulsed Drain Current | 50 | A | |||
| EAS | Single Pulse Avalanche Energy | 33 | mJ | |||
| IAS | Avalanche Current | 26 | A | |||
| PD@TC=25 | Total Power Dissipation | 21 | W | |||
| PD@TA=25 | Total Power Dissipation | 1.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 65 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.021 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=12A | --- | 8 | 9.8 | m |
| VGS=4.5V , ID=12A | --- | 12 | 15.8 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.3 | 1.7 | 2.3 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.73 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=12A | --- | 45 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1 | 3 | 5 | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=10V , ID=12A | --- | 4.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.4 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 1.6 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3 ID=12A | --- | 5 | --- | ns |
| Tr | Rise Time | --- | 3.7 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 18.5 | --- | ns | |
| Tf | Fall Time | --- | 3.2 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 562 | --- | pF |
| Coss | Output Capacitance | --- | 274 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 28 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 45 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB3060 | PRPAK3*3 | 3000/Tape&Reel | ||||
Note: Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper unless otherwise specified. Pulsed data uses pulse width 300s, duty cycle 2%. EAS data shows Max. rating with test conditions VDD=25V, VGS=10V, L=0.1mH, IAS=26A. Power dissipation is limited by 150 junction temperature. Continuous Source Current is theoretically the same as ID and IDM, but should be limited by total power dissipation in real applications.
2410121503_HUASHUO-HSBB3060_C701036.pdf
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