P channel 30V fast switching MOSFET HUASHUO HSM3115 ideal for synchronous buck converter applications
Key Attributes
Model Number:
HSM3115
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.7mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
589pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.827nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
HSM3115
Package:
SOP-8
Product Description
Product Overview
The HSM3115 is a P-channel 30V fast switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSM3115 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -10V | -14 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -10V | -11 | A | |||
| Pulsed Drain Current (IDM) | -56 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 151 | mJ | ||||
| Avalanche Current (IAS) | -55 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 1 (t≤10s) | 40 | /W | |||
| Thermal Resistance Junction-Ambient (RJA) | 1 | 75 | /W | |||
| Thermal Resistance Junction-Case (RJC) | 1 | 24 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-12A | 8.7 | m | |||
| HSM3115 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-10A | 13.5 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | ||
| HSM3115 | Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| HSM3115 | Forward Transconductance (gfs) | VDS=-5V , ID=-12A | 25 | S | ||
| HSM3115 | Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-12A | 30 | nC | ||
| HSM3115 | Gate-Source Charge (Qgs) | 10 | nC | |||
| HSM3115 | Gate-Drain Charge (Qgd) | 10.4 | nC | |||
| HSM3115 | Turn-On Delay Time (td(on)) | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 9.4 | ns | ||
| HSM3115 | Rise Time (tr) | 10.2 | ns | |||
| HSM3115 | Turn-Off Delay Time (td(off)) | 117 | ns | |||
| HSM3115 | Fall Time (tf) | 24 | ns | |||
| HSM3115 | Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 2068 | 4827 | pF | |
| Output Capacitance (Coss) | VDS=-15V , VGS=0V , f=1MHz | 304 | 711 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS=-15V , VGS=0V , f=1MHz | 252 | 589 | pF | ||
| HSM3115 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -14 | A | ||
| Pulsed Source Current (ISM) | -56 | A | ||||
| HSM3115 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse Recovery Time (trr) | IF=-10A , dI/dt=100A/µs , TJ=25 | 19.4 | nS | |||
| HSM3115 | Reverse Recovery Charge (Qrr) | IF=-10A , dI/dt=100A/µs , TJ=25 | 9.1 | nC |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM3115 | SOP-8 | 2500/Tape&Reel |
2410121456_HUASHUO-HSM3115_C700981.pdf
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