Low rdson dual n channel fast switching mosfet huashuo hscc8204 designed for lithium ion battery pack applications
Key Attributes
Model Number:
HSCC8204
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.7mΩ@3.7V,5A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
148pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.647nF@10V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
22nC@4.5V
Mfr. Part #:
HSCC8204
Package:
DFN-6-EP(3x2)
Product Description
Product Overview
The HSCC8204 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. It is specifically suitable for Lithium-ion battery pack applications. This product meets RoHS and Green Product requirements and has full function reliability approval.Product Attributes
- Brand: HS-Semi
- Device Type: Dual N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Device Available
- Protection: ESD Protected
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Description | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V | 9.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V | 7.6 | A | |||
| IDM | Pulsed Drain Current | 60 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.56 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | (t 10s) | 80 | /W | ||
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=5A | 6.3 | 9 | m | |
| VGS=4.0V , ID=5A | 6.5 | 9.5 | m | |||
| VGS=3.7V , ID=5A | 6.7 | 10 | m | |||
| VGS=3.1V , ID=5A | 7.0 | 11.2 | m | |||
| VGS=2.5V , ID=5A | 8.0 | 13.5 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.45 | 1.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=8V , VDS=0V | 10 | uA | ||
| gfs | Forward Transconductance | VDS=5V , ID=5.5A | 38 | S | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=5.5A | 22 | nC | ||
| Qgs | Gate-Source Charge | 3.1 | nC | |||
| Qgd | Gate-Drain Charge | 8.2 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=6 ID=5.5A | 10 | ns | ||
| Tr | Rise Time | 39.5 | ns | |||
| Td(off) | Turn-Off Delay Time | 65 | ns | |||
| Tf | Fall Time | 30 | ns | |||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 1647 | pF | ||
| Coss | Output Capacitance | 170 | pF | |||
| Crss | Reverse Transfer Capacitance | 148 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 9.5 | A | ||
| ISM | Pulsed Source Current | 60 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=9.5A , TJ=25 | 1.2 | V | ||
2410121531_HUASHUO-HSCC8204_C508836.pdf
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