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quality Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology factory
quality Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology factory

Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology

Key Attributes
Model Number: HSM4002
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
593pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
5.5nC@4.5V
Mfr. Part #:
HSM4002
Package:
SOP-8
Product Description

Product Overview

The HSM4002 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. The HSM4002 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It provides super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • EAS Guaranteed: 100%

Technical Specifications

Model Type Voltage (VDS) Continuous Drain Current (ID@TA=25) Pulsed Drain Current (IDM) RDS(ON),max Gate Charge (Qg) Package Ordering Information
HSM4002 N-Ch 40 7.5 A 30 A 28 m (VGS=10V, ID=5A) 5.5 nC (VDS=20V, VGS=4.5V, ID=5A) SOP-8 2500/Tape&Reel
Parameter Conditions Min. Typ. Max. Unit
Drain-Source Voltage (VDS) - - - 40 V
Gate-Source Voltage (VGS) - - - ±20 V
Continuous Drain Current (ID@TA=25) VGS @ 10V1 - - 7.5 A
Continuous Drain Current (ID@TA=70) VGS @ 10V1 - - 6 A
Pulsed Drain Current (IDM)2 - - - 30 A
Single Pulse Avalanche Energy (EAS)3 - - - 12 mJ
Avalanche Current (IAS) - - - 15 A
Total Power Dissipation (PD@TA=25)4 - - - 1.5 W
Storage Temperature Range (TSTG) - -55 - 150
Operating Junction Temperature Range (TJ) - -55 - 150
Thermal Resistance Junction-ambient (RJA)1 (Steady State) - - 85 /W
Thermal Resistance Junction-Case (RJC)1 - - - 50 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 40 - - V
BVDSS Temperature Coefficient Reference to 25 , ID=1mA - 0.034 - V/
Static Drain-Source On-Resistance (RDS(ON))2 VGS=10V , ID=5A - - 28 m
Static Drain-Source On-Resistance (RDS(ON))2 VGS=4.5V , ID=4A - - 38 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.0 - 2.5 V
VGS(th) Temperature Coefficient - - -4.56 - mV/
Drain-Source Leakage Current (IDSS) VDS=32V , VGS=0V , TJ=25 - - 1 uA
Drain-Source Leakage Current (IDSS) VDS=32V , VGS=0V , TJ=55 - - 5 uA
Gate-Source Leakage Current (IGSS) VGS=±20V , VDS=0V - - ±100 nA
Forward Transconductance (gfs) VDS=5V , ID=5A - 14 - S
Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz - 2.6 -
Total Gate Charge (Qg) VDS=20V , VGS=4.5V , ID=5A - 5.5 - nC
Gate-Source Charge (Qgs) - - 1.25 - nC
Gate-Drain Charge (Qgd) - - 2.5 - nC
Turn-On Delay Time (Td(on)) VDD=20V , VGS=10V , RG=3.3 ID=1A - 8.9 - ns
Rise Time (Tr) - - 2.2 - ns
Turn-Off Delay Time (Td(off)) - - 41 - ns
Fall Time (Tf) - - 2.7 - ns
Input Capacitance (Ciss) VDS=15V , VGS=0V , f=1MHz - 593 - pF
Output Capacitance (Coss) - - 76 - pF
Reverse Transfer Capacitance (Crss) - - 56 - pF
Continuous Source Current (IS)1,5 VG=VD=0V , Force Current - - 7.5 A
Pulsed Source Current (ISM)2,5 - - - 30 A
Diode Forward Voltage (VSD)2 VGS=0V , IS=1A , TJ=25 - - 1.2 V

2410121516_HUASHUO-HSM4002_C508785.pdf
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