High voltage switching MOSFET HUAKE SMD2N65 650V N Channel for power supply and correction circuits
Key Attributes
Model Number:
SMD2N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
270pF@25V
Pd - Power Dissipation:
44W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SMD2N65
Package:
TO-252
Product Description
Product Overview
The SMD2N65 is a 650V N-Channel MOSFET designed for high-frequency switching mode power supplies and active power factor correction applications. It offers advantages such as low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Model: SMD2N65
- Voltage Rating: 650V
- Channel Type: N-Channel
- Date: 2017.08
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 650 | V | |||
| Drain Current - Continuous (ID) (Tc=25C) | 2.0* | A | |||
| Drain Current - Continuous (ID) (Tc=100C) | 1.3* | A | |||
| Drain Current - Pulsed (IDM) | (Note1) | 8* | A | ||
| Gate-Source Voltage (VGSS) | 30 | V | |||
| Single Pulsed Avalanche Energy (EAS) | (Note2) | 120 | mJ | ||
| Avalanche Current (IAR) | (Note1) | 2.0 | A | ||
| Repetitive Avalanche Energy (EAR) | (Note1) | 4.4 | mJ | ||
| Peak Diode Recovery dv/dt | (Note3) | 4.5 | V/ns | ||
| Power Dissipation (PD) (TC =25C) | 44 | W | |||
| Derate above 25C | 0.35 | W/C | |||
| Operating Junction Temperature (Tj) | 150 | C | |||
| Storage Temperature Range (Tstg) | -55 | +150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 2.87 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 110 | C/W | |||
| Electrical Characteristics | |||||
| Drain-source Breakdown Voltage (BVDSS) | VGS=0V, ID=250A | 650 | V | ||
| Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.65 | V/C | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=650V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=520V, Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward (IGSSF) | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse (IGSSR) | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS=10V, ID=1.0A | 4.5 | 5.0 | ||
| Forward Transconductance (gFS) | VDS=40V, ID=1.0A (Note4) | 1.9 | S | ||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS=25V, VGS=0V, f=1.0MHz | 270 | pF | ||
| Output Capacitance (Coss) | VDS=25V, VGS=0V, f=1.0MHz | 40 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS=25V, VGS=0V, f=1.0MHz | 5 | pF | ||
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 325 V, ID = 2.0 A, RG = 25 (Note4,5) | 7 | ns | ||
| Turn-On Rise Time (tr) | VDD = 325 V, ID = 2.0 A, RG = 25 (Note4,5) | 23 | ns | ||
| Turn-Off Delay Time (td(off)) | VDD = 325 V, ID = 2.0 A, RG = 25 (Note4,5) | 2 | ns | ||
| Turn-Off Fall Time (tf) | VDD = 325 V, ID = 2.0 A, RG = 25 (Note4,5) | 24 | ns | ||
| Total Gate Charge (Qg) | VDS = 520 V, ID =2.0 A, VGS = 10 V (Note4,5) | 9 | nC | ||
| Gate-Source Charge (Qgs) | VDS = 520 V, ID =2.0 A, VGS = 10 V (Note4,5) | 1.6 | nC | ||
| Gate-Drain Charge (Qgd) | VDS = 520 V, ID =2.0 A, VGS = 10 V (Note4,5) | 4.3 | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 2.0 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 8 | A | |||
| Drain-Source Diode Forward Voltage (VSD) | VGS =0V, IS=2.0A | 1.4 | V | ||
| Reverse Recovery Time (trr) | VGS =0V, IS=2.0A, d IF /dt=100A/s (Note4) | 230 | ns | ||
| Reverse Recovery Charge (Qrr) | VGS =0V, IS=2.0A, d IF /dt=100A/s (Note4) | 1.0 | C | ||
2410122013_HUAKE-SMD2N65_C570146.pdf
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