P channel MOSFET HUASHUO HSH047P06 with 60V drain source voltage and full function reliability approval
Key Attributes
Model Number:
HSH047P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.701nF
Pd - Power Dissipation:
183W
Input Capacitance(Ciss):
17.9nF
Gate Charge(Qg):
280nC@10V
Mfr. Part #:
HSH047P06
Package:
TO-263
Product Description
Product Overview
The HSH047P06 is a P-channel 60V fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | -150 | A | |||
| ID@TC=100 | Continuous Drain Current1 | -85 | A | |||
| IDM | Pulsed Drain Current2 | -520 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 480 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 183 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.68 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-50A | 3.9 | 4.7 | m | |
| VGS=-4.5V , ID=-30A | 4.8 | 6.2 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | -10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-10V ,ID=-3A | 18 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-10V , ID=-5A | 280 | --- | nC | |
| Qgs | Gate-Source Charge | 55 | --- | |||
| Qgd | Gate-Drain Charge | 24 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-48V , VGS=-10V , RG=6, ID=-1A | 88 | --- | ns | |
| tr | Rise Time | 258 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 509 | --- | ns | ||
| tf | Fall Time | 244 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 17900 | --- | pF | |
| Coss | Output Capacitance | 1701 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 680 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -150 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-40A , TJ=25 | --- | -1 | V | |
| trr | Reverse Recovery Time | ISD=-10A, dI/dt=100A/us | 46 | --- | ns | |
| Qrr | Reverse Recovery Charge | 117 | --- | nC | ||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=98A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121637_HUASHUO-HSH047P06_C2909634.pdf
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