Power supply MOSFET HUAKE SMF2N60 600V N Channel with low gate charge and 100 percent avalanche tested performance
Key Attributes
Model Number:
SMF2N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
270pF@25V
Pd - Power Dissipation:
23W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SMF2N60
Package:
TO-220F
Product Description
Product Overview
The SMF2N60 is a 600V N-Channel MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF2N60
- Document Version: B/0
- Document Date: 2017.08
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 2.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 1.3* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 8* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Note2) | EAS | 120 | mJ | |||
| Avalanche Current (Note1) | IAR | 2.0 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 4.4 | mJ | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation (TC =25C) | PD | 23 | W | |||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 5.5 | C /W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C /W | |||
| Electrical Characteristics | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 600 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | 0.65 | V/C | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=480V,Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=1.0A | 3.8 | 4.5 | ||
| Forward Transconductance | gFS | VDS=40 V, ID=1.0A (Note4) | 1.9 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | 270 | pF | ||
| Output Capacitance | Coss | 40 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 300 V, ID = 2.0 A, RG = 25 (Note4,5) | 7 | ns | ||
| Turn-On Rise Time | tr | 23 | ns | |||
| Turn-Off Delay Time | td(off) | 2 | ns | |||
| Turn-Off Fall Time | tf | 24 | ns | |||
| Total Gate Charge | Qg | VDS = 480 V, ID =2.0 A, VGS = 10 V (Note4,5) | 9 | nC | ||
| Gate-Source Charge | Qgs | 1.6 | nC | |||
| Gate-Drain Charge | Qgd | 4.3 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2.0 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 8 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=2.0A | 1.4 | V | ||
| Reverse Recovery Time | trr | VGS =0V, IS=2.0A, d IF /dt=100A/s (Note4) | 230 | ns | ||
| Reverse Recovery Charge | Qrr | 1.0 | C | |||
2410122013_HUAKE-SMF2N60_C570134.pdf
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