Fast Switching P Channel MOSFET HUASHUO HSU0139 Offering Excellent CdV dt Effect and RoHS Compliance
Key Attributes
Model Number:
HSU0139
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
125pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
6.516nF@25V
Pd - Power Dissipation:
102W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
HSU0139
Package:
TO-252
Product Description
Product Overview
The HSU0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide variety of applications and meets RoHS and Green Product requirements. The device is 100% EAS guaranteed with full function reliability approved, offering super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: H-SMEI
- Product Type: P-Channel MOSFET
- Technology: Advanced Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -19 | A | |||
| IDM | Pulsed Drain Current | -100 | A | |||
| EAS | Single Pulse Avalanche Energy | 185 | mJ | |||
| IAS | Avalanche Current | -28 | A | |||
| PD@TC=25 | Total Power Dissipation | 102 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 1.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-30A | 42 | 50 | m | |
| VGS=-4.5V , ID=-8A | 46 | 55 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | --- | -50 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-10A | 32 | --- | S | |
| Qg | Total Gate Charge | VDS=-80V , VGS=-10V , ID=-14A | 92 | --- | nC | |
| Qgs | Gate-Source Charge | 17.5 | --- | |||
| Qgd | Gate-Drain Charge | 14 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-14A | 20.5 | --- | ns | |
| Tr | Rise Time | 32.2 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 123 | --- | ns | ||
| Tf | Fall Time | 63.7 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 6516 | --- | pF | |
| Coss | Output Capacitance | 223 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 125 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | -30 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=-14A , di/dt=-100A/s , TJ=25 | 31.2 | --- | ns | |
| Qrr | Reverse Recovery Charge | 31.97 | --- | nC | ||
2410121642_HUASHUO-HSU0139_C701018.pdf
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