HYG065N07NS1D MOSFET with 70 Volt Drain Source Voltage and 70 Ampere Continuous Drain Current Rating
Key Attributes
Model Number:
HYG065N07NS1D
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
844pF
Input Capacitance(Ciss):
2.908nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HYG065N07NS1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG065N07NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)= 6m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. Available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) | Avalanche Energy (mJ) |
| HYG065N07NS1D | TO-252-2L | 70 | 70 | 6 (typ. @VGS=10V) | 213 (L=0.3mH) |
| HYG065N07NS1U | TO-251-3L | 70 | 70 | 6 (typ. @VGS=10V) | 213 (L=0.3mH) |
| HYG065N07NS1V | TO-251-3S | 70 | 70 | 6 (typ. @VGS=10V) | 213 (L=0.3mH) |
2409271703_HUAYI-HYG065N07NS1D_C2827240.pdf
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