Trench technology p channel mosfet HUASHUO HSK5P10 100 volt fast switching device ideal for switching
Key Attributes
Model Number:
HSK5P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
330mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF@50V
Number:
1 P-Channel
Input Capacitance(Ciss):
990pF@50V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSK5P10
Package:
SOT-89
Product Description
Product Overview
The HSK5P10 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a SOT-89 package. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Packaging: 1000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -3.5 | A | |||
| IDM | Pulsed Drain Current2 | -20 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 80 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 50 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.0624 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-5A | 280 | 330 | m | |
| VGS=-4.5V , ID=-3A | 290 | 360 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.0 | -3.0 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.5 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=-100V , VGS=0V , TJ=55 | 10 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-2A | 15 | nC | ||
| Qgs | Gate-Source Charge | 5.4 | nC | |||
| Qgd | Gate-Drain Charge | 4 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3 ID=-1A | 14 | ns | ||
| tr | Rise Time | 3.7 | ns | |||
| td(off) | Turn-Off Delay Time | 34 | ns | |||
| tf | Fall Time | 6 | ns | |||
| Ciss | Input Capacitance | VDS=-50V , VGS=0V , f=1MHz | 990 | pF | ||
| Coss | Output Capacitance | 38 | pF | |||
| Crss | Reverse Transfer Capacitance | 23 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -5 | A | ||
| ISM | Pulsed Source Current2,4 | -20 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤300us, duty cycle ≤2%.
- 3. The power dissipation is limited by 150 junction temperature.
- 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package code | Packaging |
|---|---|---|
| HSK5P10 | SOT-89 | 1000/Tape&Reel |
2410122017_HUASHUO-HSK5P10_C28314511.pdf
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