N Channel Fast Switching MOSFET HUASHUO HSBA4088A with 40V Drain Source Voltage and Low Gate Charge
Key Attributes
Model Number:
HSBA4088A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
255A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
0.85mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
130pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
6.11nF@20V
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
HSBA4088A
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4088A is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring a 40V drain-source voltage and advanced trench technology, it offers high current capability and low gate charge. This MOSFET is ideal for synchronous rectification in SMPS, DC/DC converters, and OR-ing applications. It is RoHS and Halogen-Free compliant, ensuring environmental responsibility.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench Technology
- Compliance: RoHS and Halogen-Free
- Testing: 100% UIS Tested
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBA4088A | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current, VGS @ 10V (ID@TC=25) | 255 | A | ||||
| Continuous Drain Current, VGS @ 10V (ID@TC=100) | 160 | A | ||||
| Pulsed Drain Current (IDM) | 850 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 810 | mJ | ||||
| Avalanche Current (IAS) | 112 | A | ||||
| Total Power Dissipation (PD@TC=25) | 110 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 63 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 0.98 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | 0.85 | 1.1 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 2.0 | 4.0 | V | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 2.1 | ||||
| Forward Transconductance (gfs) | VDS=5V , ID=20A | 66 | S | |||
| Total Gate Charge (Qg) | VDS=20V , VGS=10V , ID=20A | 101 | nC | |||
| Gate-Source Charge (Qgs) | 17 | nC | ||||
| Gate-Drain Charge (Qgd) | 17.9 | nC | ||||
| Turn-On Delay Time (td(on)) | VDD=20V , VGS=10V , RG=1.5, ID=20A | 22 | ns | |||
| Rise Time (tr) | 29 | ns | ||||
| Turn-Off Delay Time (td(off)) | 85 | ns | ||||
| Fall Time (tf) | 31 | ns | ||||
| Input Capacitance (Ciss) | VDS=20V , VGS=0V , f=1MHz | 6110 | pF | |||
| Output Capacitance (Coss) | 2133 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 130 | pF | ||||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | 255 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=20A , di/dt=100A/s , TJ=25 | 65 | nS | |||
| Reverse Recovery Charge (Qrr) | 75 | nC |
2504101957_HUASHUO-HSBA4088A_C45385117.pdf
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