Low Gate Charge P Channel Fast Switching MOSFET HUASHUO HSBA30P15 for Power Switching Applications
Key Attributes
Model Number:
HSBA30P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
337pF
Number:
1 P-Channel
Output Capacitance(Coss):
744pF
Input Capacitance(Ciss):
5.99nF
Pd - Power Dissipation:
80W
Gate Charge(Qg):
93nC@10V
Mfr. Part #:
HSBA30P15
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA30P15 is a P-Channel Fast Switching MOSFET designed for a wide variety of applications. It utilizes advanced trench MOSFET technology to achieve excellent RDS(ON) and low gate charge. This device is RoHS and Green Product compliant, 100% EAS guaranteed, and offers full function reliability. Key features include super low gate charge and excellent CdV/dt effect decline, making it suitable for applications requiring efficient power switching.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -20 | A | |||
| IDM | Pulsed Drain Current2 | -100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 560 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 80 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.3 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 56 | 70 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2 | -3 | -4 | V |
| IDSS | Drain-Source Leakage Current | VDS=-150V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-20A | 14 | --- | S | |
| Qg | Total Gate Charge | VDS=-75V , VGS=-10V , ID=-20A | 93 | --- | nC | |
| Qgs | Gate-Source Charge | 18 | --- | |||
| Qgd | Gate-Drain Charge | 14 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-75V , VGS=-10V , RG=3.3, ID=-20A | 63 | --- | ns | |
| Tr | Rise Time | 27 | --- | |||
| Td(off) | Turn-Off Delay Time | 230 | --- | |||
| Tf | Fall Time | 80 | --- | |||
| Ciss | Input Capacitance | VDS=-75V , VGS=0V , f=1MHz | 5990 | --- | pF | |
| Coss | Output Capacitance | 744 | --- | |||
| Crss | Reverse Transfer Capacitance | 337 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -30 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.3 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA30P15 | PRPAK5*6 | 3000/Tape&Reel |
2410122026_HUASHUO-HSBA30P15_C22359245.pdf
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