30V dual P channel MOSFET HUASHUO HSM4805 featuring low gate charge and excellent CdV dt effect decline
Key Attributes
Model Number:
HSM4805
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
237pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
2.215nF@15V
Pd - Power Dissipation:
2W
Mfr. Part #:
HSM4805
Package:
SOP-8
Product Description
Product Overview
The HSM4805 is a dual P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM4805 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | 25 | V | ||||
| Continuous Drain Current (ID) | -VGS @ -10V, TA=25 | -9 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TA=70 | -7 | A | |||
| Pulsed Drain Current (IDM) | -40 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | ||||
| Avalanche Current (IAS) | -50 | A | ||||
| Total Power Dissipation (PD) | TA=25 | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 85 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 24 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-8A | 12 | 16 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -9 | A |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSM4805 | Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | ||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-8A | 20 | nC | ||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 2215 | pF | ||
| Output Capacitance (Coss) | 310 | pF | |||
| Reverse Transfer Capacitance (Crss) | 237 | pF |
| Model | Parameter | Conditions | Typ. | Max. | Units |
|---|---|---|---|---|---|
| HSM4805 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |
| Reverse Recovery Time (trr) | IF=-8A , dI/dt=100A/s , TJ=25 | 35 | nS | ||
| Reverse Recovery Charge (Qrr) | 25 | nC |
| Model | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSM4805 | SOP-8 | Tape&Reel | 4000 |
2410121448_HUASHUO-HSM4805_C700973.pdf
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