Trench technology based 80V P channel MOSFET HUASHUO HSH8129 designed for fast switching and power conversion
Key Attributes
Model Number:
HSH8129
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
620pF
Number:
1 P-Channel
Output Capacitance(Coss):
670pF
Input Capacitance(Ciss):
24.3nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
380nC@10V
Mfr. Part #:
HSH8129
Package:
TO-263
Product Description
Product Overview
The HSH8129 is a P-channel 80V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSH
- Product Type: P-Ch MOSFET
- Voltage Rating: 80V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -80 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -120 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -70 | A | |||
| IDM | Pulsed Drain Current2 | -480 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1400 | mJ | |||
| IAS | Avalanche Current | -90 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 210 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 0.73 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -80 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 6.6 | 8 | m | |
| VGS=-4.5V , ID=-10A | 7.2 | 9 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=-80V , VGS=0V , TJ=55 | 10 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VGS=0V, VDS=0V, f=1.0MHz | 1.7 | |||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 64 | S | ||
| Qg | Total Gate Charge | VDS=-40V , VGS=-10V , ID=-10A | 380 | nC | ||
| Qgs | Gate-Source Charge | 58 | nC | |||
| Qgd | Gate-Drain Charge | 110 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 21 | ns | ||
| tr | Rise Time | 20 | ns | |||
| td(off) | Turn-Off Delay Time | 50 | ns | |||
| tf | Fall Time | 38 | ns | |||
| Ciss | Input Capacitance | VDS=-40V , VGS=0V , f=1MHz | 24300 | pF | ||
| Coss | Output Capacitance | 670 | pF | |||
| Crss | Reverse Transfer Capacitance | 620 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -120 | A | ||
| ISM | Pulsed Source Current2,5 | -480 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A, di/dt=100A/s | 45 | ns | ||
| Qrr | Reverse Recovery Charge | IF=-20A, di/dt=100A/s | 71 | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
3. The EAS data shows Max. rating. The test condition is VDD=-50V, VGS=-10V, L=0.1mH, RG=25, IAS=-90A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2411061707_HUASHUO-HSH8129_C42376818.pdf
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