30V P channel MOSFET HUASHUO HSU100P03 featuring fast switching and low gate charge trench technology
Key Attributes
Model Number:
HSU100P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
700pF
Number:
1 P-Channel
Input Capacitance(Ciss):
9.3nF
Output Capacitance(Coss):
989pF
Pd - Power Dissipation:
105W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSU100P03
Package:
TO-252-2
Product Description
Product Overview
The HSU100P03 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: H-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 30V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -65 | A | |||
| IDM | Pulsed Drain Current2 | -400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 210 | mJ | |||
| IAS | Avalanche Current | -30 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 105 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t<≈10S) | 20 | /W | |||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | 50 | /W | |||
| RJC | Thermal Resistance Junction-case 1 | 1.45 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 4 | 5.3 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-15A | 5.7 | 8.2 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-30A | 45 | nC | ||
| Qgs | Gate-Source Charge | 9 | ||||
| Qgd | Gate-Drain Charge | 12 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-30A | 17 | ns | ||
| Tr | Rise Time | 19 | ns | |||
| Td(off) | Turn-Off Delay Time | 68 | ns | |||
| Tf | Fall Time | 23 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 9300 | pF | ||
| Coss | Output Capacitance | 989 | ||||
| Crss | Reverse Transfer Capacitance | 700 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -100 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU100P03 | TO252-2 | 2500/Tape&Reel | ||||
2410121631_HUASHUO-HSU100P03_C845609.pdf
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