P channel 60V MOSFET HUASHUO HSU70P06 with fast switching and 100 percent EAS guaranteed performance
Key Attributes
Model Number:
HSU70P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
291pF
Number:
1 P-Channel
Output Capacitance(Coss):
494pF
Input Capacitance(Ciss):
8.635nF
Pd - Power Dissipation:
135W
Gate Charge(Qg):
140nC@10V
Mfr. Part #:
HSU70P06
Package:
TO-252-2
Product Description
Product Overview
The HSU70P06 is a P-channel, 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch 60V Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -70 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -44 | A | |||
| IDM | Pulsed Drain Current2 | -280 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 320 | mJ | |||
| IAS | Avalanche Current | 80 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 135 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.95 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.036 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 7.5 | 9.2 | m | |
| VGS=-4.5V , ID=-10A | 9.3 | 12 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.28 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 18 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-10V , ID=-5A | 140 | --- | nC | |
| Qgs | Gate-Source Charge | 17 | --- | |||
| Qgd | Gate-Drain Charge | 29 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-48V , VGS=-10V , RG=6, ID=-1A | 70 | --- | ns | |
| tr | Rise Time | 206 | --- | |||
| td(off) | Turn-Off Delay Time | 400 | --- | |||
| tf | Fall Time | 198 | --- | |||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 8635 | --- | pF | |
| Coss | Output Capacitance | 494 | --- | |||
| Crss | Reverse Transfer Capacitance | 291 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -70 | A | |
| ISM | Pulsed Source Current2,5 | --- | -140 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU70P06 | TO252-2 | 2500/Tape&Reel | ||||
2410121653_HUASHUO-HSU70P06_C2828492.pdf
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