Power Switching Device HUAYI HY3810NA2W N Channel Enhancement Mode MOSFET with Low On Resistance
Key Attributes
Model Number:
HY3810NA2W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
RDS(on):
5.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
319pF
Number:
1 N-channel
Pd - Power Dissipation:
348W
Input Capacitance(Ciss):
7.409nF
Gate Charge(Qg):
159.2nC@10V
Mfr. Part #:
HY3810NA2W
Package:
TO-247A-3L
Product Description
HY3810NA2W N-Channel Enhancement Mode MOSFET
The HY3810NA2W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages including 100V/180A rating, low on-resistance of 4.2m (typ.) at VGS = 10V, and 100% avalanche tested. This device is available in Halogen-Free and Green (RoHS Compliant) options, making it suitable for environmentally conscious designs. It is ideal for use in Uninterruptible Power Supply systems and other demanding power switching scenarios.
Product Attributes
- Brand: HYMEXA (implied by www.hymexa.com)
- Model: HY3810NA2W
- Type: N-Channel Enhancement Mode MOSFET
- Certifications: RoHS Compliant, Halogen-Free and Green Devices Available
- Package: TO-247A-3L
Technical Specifications
| Parameter | Conditions | Rating | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | 100 | V |
| Gate-Source Voltage (VGSS) | Tc=25C Unless Otherwise Noted | 25 | V |
| Maximum Junction Temperature (TJ) | -55 to 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Source Current-Continuous (Body Diode) (IS) | Tc=25C | 180 | A |
| Pulsed Drain Current (IDM) | Tc=25C | 590 | A |
| Continuous Drain Current (ID) | Tc=25C | 180 | A |
| Continuous Drain Current (ID) | Tc=100C | 127 | A |
| Maximum Power Dissipation (PD) | Tc=25C | 348 | W |
| Maximum Power Dissipation (PD) | Tc=100C | 174 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | 0.43 | C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | 57 | C/W |
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 856.5 | mJ |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 100 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | 1.0 A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | 50 A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2-4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | 100 nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | 4.2-5.5 | m |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.86-1.3 V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | 45.9 | ns |
| Reverse Recovery Charge (Qrr) | - | 91.7 | nC |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 1.5 |
| Input Capacitance (Ciss) | VGS=0V, VDS=50V, Frequency=1.0MHz | 7409 | pF |
| Output Capacitance (Coss) | - | 556 | pF |
| Reverse Transfer Capacitance (Crss) | - | 319 | pF |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5, IDS=50A,VGS=10V | 26.4 | ns |
| Turn-on Rise Time (Tr) | - | 97.3 | ns |
| Turn-off Delay Time (td(OFF)) | - | 64.2 | ns |
| Turn-off Fall Time (Tf) | - | 102.7 | ns |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V ID=50A | 159.2 | nC |
| Gate-Source Charge (Qgs) | - | 41.5 | nC |
| Gate-Drain Charge (Qgd) | - | 58.9 | nC |
2409302230_HUAYI-HY3810NA2W_C2985897.pdf
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