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quality 150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology factory
quality 150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology factory
quality 150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology factory
quality 150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology factory

150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology

Key Attributes
Model Number: HSY1502
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
255A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
720pF
Pd - Power Dissipation:
600W
Input Capacitance(Ciss):
8.66nF
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
HSY1502
Package:
TOLL-8L
Product Description

Product Overview

The HSY1502 is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 150V drain-source voltage and a super low RDS(ON) due to its advanced high cell density Trench technology. Key advantages include 100% EAS guaranteed and availability of a green device option. This MOSFET is ideal for motor drivers, UPS systems, power tools, and synchronous rectification in SMPS.

Product Attributes

  • Brand: HSY
  • Technology: Advanced high cell density Trench technology
  • Device Type: N-Channel Fast Switching MOSFET
  • Certification: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 255 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 160 A
IDM Pulsed Drain Current2 1020 A
EAS Single Pulse Avalanche Energy3 1300 mJ
PD@TC=25 Total Power Dissipation4 600 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
Thermal Data
RJA Thermal Resistance Junction-Ambient 50 /W
RJC Thermal Resistance Junction-Case1 0.25 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A 3.5 4.0 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 4.9
Qg Total Gate Charge (10V) VDS=75V , VGS=10V , ID=20A 128 nC
Qgs Gate-Source Charge 83 nC
Qgd Gate-Drain Charge 44 nC
Td(on) Turn-On Delay Time VDD=75V , VGS=10V , RG=4.5, RL=1,ID=20A 33 ns
Tr Rise Time 68 ns
Td(off) Turn-Off Delay Time 85 ns
Tf Fall Time 41 ns
Ciss Input Capacitance VDS=75V , VGS=0V , f=1MHz 8660 pF
Coss Output Capacitance 720 pF
Crss Reverse Transfer Capacitance 28 pF
Diode Characteristics
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 1.1 V
trr Reverse Recovery Time IF=15A , dI/dt=100A/s , TJ=25 118 nS
Qrr Reverse Recovery Charge 431 nC

Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The EAS data shows Max. rating. The test condition is VDD=75V, VGS=10V, L=0.3mH, IAS = 75A.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current.


2411061650_HUASHUO-HSY1502_C42376820.pdf

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