N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance
Key Attributes
Model Number:
HSBB0056
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
849pF@50V
Gate Charge(Qg):
17.9nC@10V
Mfr. Part #:
HSBB0056
Package:
PRPAK3x3-8
Product Description
Product Overview
The HSBB0056 is a N-Channel 100V Fast Switching MOSFET designed for high-speed circuit applications. It offers guaranteed 100% EAS, low RDS(ON), and low gate charge, making it suitable for portable equipment and battery-powered systems. This MOSFET is also RoHS and Halogen-Free compliant.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast Switching
- Compliance: RoHS and Halogen-Free
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current1,6 | 27 | A | |||
| ID@TC=100 | Continuous Drain Current1,6 | 17 | A | |||
| IDM | Pulsed Drain Current2 | 80 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 45 | mJ | |||
| IAS | Avalanche Current | 30 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 28 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | (t≤10s) | 25 | /W | ||
| RJA | Thermal Resistance Junction-Ambient1 | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 4.5 | /W | |||
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON),Max | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | 16 | 20 | mΩ | |
| RDS(ON),Max | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=10A | 21 | 30 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25°C | 1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55°C | 5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V,f=1MHz | 1 | Ω | ||
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=10A | 17.9 | nC | ||
| Qgs | Gate-Source Charge | 2.8 | nC | |||
| Qgd | Gate-Drain Charge | 5.2 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=6Ω, ID=1A | 13 | ns | ||
| Tr | Rise Time | 6 | ns | |||
| Td(off) | Turn-Off Delay Time | 30 | ns | |||
| Tf | Fall Time | 29 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 849 | pF | ||
| Coss | Output Capacitance | 185 | pF | |||
| Crss | Reverse Transfer Capacitance | 8 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5,6 | VG=VD=0V , Force Current | 27 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25°C | 1.2 | V | ||
Applications
- Portable Equipment
- Battery Powered Systems
- Hard Switching and High-Speed Circuit
Product Features
- 100% EAS Guaranteed
- Low RDS(ON)
- Low Gate Charge
- RoHS and Halogen-Free Compliant
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB0056 | PRPAK3*3 | 3000/Tape&Reel |
2410121448_HUASHUO-HSBB0056_C7543692.pdf
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