P Channel MOSFET HUASHUO HSH0129 100V Fast Switching Device for Power Tool and Switching Applications
Key Attributes
Model Number:
HSH0129
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.9V
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
250W
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
HSH0129
Package:
TO-263
Product Description
Product Overview
The HSH0129 is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is suitable for DC/DC converters, power tool applications, and offers fast switching speed with advanced high cell density Trench technology. This device is 100% EAS guaranteed and available as a Green Device.
Product Attributes
- Brand: HSH
- Type: P-Channel MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast
- Technology: Advanced high cell density Trench technology
- Certifications: 100% EAS Guaranteed, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -130 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -78 | A | |||
| IDM | Pulsed Drain Current2 | -400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1510 | mJ | |||
| IAS | Avalanche Current | -140 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 250 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 0.6 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | V | ||
| RDS(ON),typ | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 12 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 13 | 16 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1 | -1.9 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | -1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=-0V , VGS=0V, f=1MHz | 1 | |||
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-20A | 230 | nC | ||
| Qgs | Gate-Source Charge | 18 | ||||
| Qgd | Gate-Drain Charge | 13 | ||||
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-20A | 29 | ns | ||
| Tr | Rise Time | 82 | ns | |||
| Td(off) | Turn-Off Delay Time | 76 | ns | |||
| Tf | Fall Time | 92 | ns | |||
| Ciss | Input Capacitance | VDS=-50V , VGS=0V , f=1MHz | 23250 | pF | ||
| Coss | Output Capacitance | 523 | ||||
| Crss | Reverse Transfer Capacitance | 475 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -100 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=-100A/s , TJ=25 | 70 | nS | ||
| Qrr | Reverse Recovery Charge | 140 | nC | |||
2508281825_HUASHUO-HSH0129_C51025882.pdf
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