Fast Switching 100V Dual N Channel MOSFET HUASHUO HSBA0256 Featuring SGT MOS Technology Green Option
Key Attributes
Model Number:
HSBA0256
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
2 N-Channel
Output Capacitance(Coss):
165pF
Input Capacitance(Ciss):
851pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
HSBA0256
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0256 is a dual N-channel, 100V fast-switching MOSFET from HS-Semi. It features SGT MOS Technology, 100% EAS guaranteed, and fast switching speed, making it suitable for battery-powered systems, portable equipment, and hard switching/high-speed circuits. A green device option is available.
Product Attributes
- Brand: HS-Semi
- Technology: SGT MOS
- Device Type: Dual N-Channel MOSFET
- Switching Speed: Fast
- Environmental: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 30 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V | 18.5 | A | |||
| IDM | Pulsed Drain Current | 80 | A | |||
| EAS | Single Pulse Avalanche Energy | 45 | mJ | |||
| IAS | Avalanche Current | 30 | A | |||
| PD@TC=25 | Total Power Dissipation | 30 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | (Note 1) | 4.2 | /W | ||
| Product Summary | ||||||
| VDS | 100 | V | ||||
| RDS(ON),typ | ID=30A | 16.5 | m | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=10A (Note 2) | 16.5 | 20 | m | |
| VGS=4.5V , ID=10A (Note 2) | 22 | 30 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=80V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 0.8 | |||
| Qg | Total Gate Charge (4.5V) | VDS=50V , VGS=10V , ID=10A | 18 | nC | ||
| Qgs | Gate-Source Charge | 2.9 | ||||
| Qgd | Gate-Drain Charge | 5.2 | ||||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=6 ID=1A | 13 | ns | ||
| Tr | Rise Time | 6 | ns | |||
| Td(off) | Turn-Off Delay Time | 29 | ns | |||
| Tf | Fall Time | 30 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 851 | pF | ||
| Coss | Output Capacitance | 165 | pF | |||
| Crss | Reverse Transfer Capacitance | 8 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current (Note 1,5) | 30 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 (Note 2) | 1.2 | V | ||
| Package Outline | ||||||
| Package Name | Dimensions (mm) | Dimensions (inches) | ||||
| PRPAK5*6 | MIN: 0.90x3.61x3.30, MAX: 1.17x3.96x3.78 | MIN: 0.035x0.142x0.130, MAX: 0.046x0.156x0.149 | ||||
| Ordering Information | ||||||
| Part Number | Package Code | Packaging | ||||
| HSBA0256 | PRPAK5*6 | 3000/Tape&Reel | ||||
2511121556_HUASHUO-HSBA0256_C2987720.pdf
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