Power Management N Channel Enhancement Mode MOSFET HUAYI HY3810P 100V 180A Low RDS ON 5 Milliohm
Key Attributes
Model Number:
HY3810P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
631pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.889nF
Output Capacitance(Coss):
1.013nF
Pd - Power Dissipation:
346W
Gate Charge(Qg):
185nC@10V
Mfr. Part #:
HY3810P
Package:
TO-220FB
Product Description
Product Overview
The HY3810 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/180A rating and a low RDS(ON) of 5.0 m (typ.) at VGS=10V. This MOSFET is reliable, rugged, and available in lead-free and green (RoHS compliant) options. It has undergone 100% avalanche testing.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | Drain-Source Voltage | TC=25C Unless Otherwise Noted | 100 | V | |||
| Gate-Source Voltage | ±25 | V | |||||
| Maximum Junction Temperature | 175 | °C | |||||
| Storage Temperature Range | -55 | 175 | °C | ||||
| Diode Continuous Forward Current | IS | TC=25°C | 180 | A | |||
| Continuous Drain Current | ID | TC=100°C | 132 | A | |||
| Pulsed Drain Current | IDM | TC=25°C | 45 | A | |||
| Maximum Power Dissipation | PD | TC=100°C | 173 | W | |||
| Thermal Resistance-Junction to Case | RθJC | 0.43 | °C/W | ||||
| Thermal Resistance-Junction to Ambient | RθJA | Mounted on Large Heat Sink | 62.5 | °C/W | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, TJ=85°C | 10 | μA | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 2.0 | 3.0 | 4.0 | V | |
| Gate Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | |||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=90A | 5.0 | 6.5 | mΩ | ||
| Diode Forward Voltage | VSD | ISD=90A, VGS=0V | 0.8 | 1 | V | ||
| Reverse Recovery Time | trr | ISD=90A, dlSD/dt=100A/μs | 65 | ns | |||
| Reverse Recovery Charge | Qrr | ISD=90A, dlSD/dt=100A/μs | 103 | nC | |||
| Dynamic Characteristics | Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.3 | Ω | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 7889 | pF | |||
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | 1013 | pF | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | 631 | pF | |||
| Switching Time | Turn-on Delay Time | td(ON) | VDD=50V, RG= 6 Ω, IDS =90A, VGS=10V, | 28 | ns | ||
| Turn-on Rise Time | Tr | 50 | ns | ||||
| Turn-off Delay Time | td(OFF) | 85 | ns | ||||
| Turn-off Fall Time | Tf | 50 | ns | ||||
| Gate Charge Characteristics | Total Gate Charge | Qg | VDS=80V, VGS=10V, IDS=90A | 185 | nC | ||
| Gate-Source Charge | Qgs | 34 | nC | ||||
| Gate-Drain Charge | Qgd | 60 | nC |
2410121913_HUAYI-HY3810P_C357981.pdf
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