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quality synchronous buck converter MOSFET HUASHUO HSU0018A featuring low gate charge and trench cell design factory
quality synchronous buck converter MOSFET HUASHUO HSU0018A featuring low gate charge and trench cell design factory

synchronous buck converter MOSFET HUASHUO HSU0018A featuring low gate charge and trench cell design

Key Attributes
Model Number: HSU0018A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
94pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.645nF@15V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
38.6nC@10V
Mfr. Part #:
HSU0018A
Package:
TO-252
Product Description

Product Overview

The HSU0018A is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HSU
  • Product Type: N-ch MOSFET
  • Technology: Advanced high cell density Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 45 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 28 A
IDM Pulsed Drain Current2 100 A
EAS Single Pulse Avalanche Energy3 84 mJ
IAS Avalanche Current 41 A
PD@TC=25 Total Power Dissipation4 90 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 1.4 /W
Product Summary
Model HSU0018A
VDS Drain-Source Voltage 100 V
RDS(ON),max Max. On-Resistance 22 m
ID Continuous Drain Current 45 A
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A 18 22 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 --- 4.5 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=30A 27 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.9 3.8
Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=30A 27.6 38.6 nC
Qgs Gate-Source Charge --- 11.4 16 nC
Qgd Gate-Drain Charge --- 7.9 11.1 nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3, ID=30A 15.6 31.2 ns
Tr Rise Time --- 17.2 31
Td(off) Turn-Off Delay Time --- 16.8 33.6 ns
Tf Fall Time --- 9.2 18.4
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 1890 2645 pF
Coss Output Capacitance --- 268 375 pF
Crss Reverse Transfer Capacitance --- 67 94 pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 45 A
ISM Pulsed Source Current2,5 --- 100 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , TJ=25 34 --- nS
Qrr Reverse Recovery Charge --- 47 --- nC

2410121455_HUASHUO-HSU0018A_C508796.pdf

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