High Current N Channel MOSFET HUASHUO HSBA4094 Suitable for SMPS Or ing Circuits and Fast Switching
Key Attributes
Model Number:
HSBA4094
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
118A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
71pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.65nF@20V
Pd - Power Dissipation:
74W
Gate Charge(Qg):
22.7nC@4.5V
Mfr. Part #:
HSBA4094
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4094 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it ideal for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS and EAS tested, RoHS and Halogen-Free compliant, ensuring reliability and environmental responsibility.
Product Attributes
- Brand: HS-Semi
- Model: HSBA4094
- Type: N-Channel Fast Switching MOSFET
- Technology: Advanced Trench Technology
- Compliance: RoHS and Halogen-Free
- Testing: 100% UIS Tested, 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 40 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID@TC=25 (Continuous Drain Current) | VGS @ 10V1,6 | 118 | A | ||
| ID@TC=100 (Continuous Drain Current) | VGS @ 10V1,6 | 72 | A | ||
| IDM (Pulsed Drain Current)2 | 240 | A | |||
| EAS (Single Pulse Avalanche Energy)3 | 145 | mJ | |||
| IAS (Avalanche Current) | 54 | A | |||
| PD@TC=25 (Total Power Dissipation)4 | 74 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-Ambient) | 55 | /W | |||
| RJC (Thermal Resistance Junction-Case)1 | 1.7 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 40 | V | ||
| RDS(ON) (Static Drain-Source On-Resistance)2 | VGS=10V , ID=20A | 2.5 | 3.2 | m | |
| VGS=4.5V , ID=15A | 3.8 | 5.3 | m | ||
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| IDSS (Drain-Source Leakage Current) | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=32V , VGS=0V , TJ=55 | 5 | uA | |||
| IGSS (Gate-Source Leakage Current) | VGS=20V , VDS=0V | 100 | nA | ||
| gfs (Forward Transconductance) | VDS=5V , ID=20A | 75 | S | ||
| Rg (Gate Resistance) | VDS=0V , VGS=0V , f=1MHz | 1.5 | |||
| Qg (Total Gate Charge) | VDS=20V , VGS=4.5V , ID=20A | 22.7 | nC | ||
| Qgs (Gate-Source Charge) | 7.5 | nC | |||
| Qgd (Gate-Drain Charge) | 5.5 | nC | |||
| Td(on) (Turn-On Delay Time) | VDD=20V , VGS=10V , RG=3, ID=20A | 10 | ns | ||
| Tr (Rise Time) | 5 | ns | |||
| Td(off) (Turn-Off Delay Time) | 33 | ns | |||
| Tf (Fall Time) | 6.5 | ns | |||
| Ciss (Input Capacitance) | VDS=20V , VGS=0V , f=1MHz | 2650 | pF | ||
| Coss (Output Capacitance) | 899 | pF | |||
| Crss (Reverse Transfer Capacitance) | 71 | pF | |||
| Diode Characteristics | |||||
| IS (Continuous Source Current)1,6 | VG=VD=0V , Force Current | 118 | A | ||
| VSD (Diode Forward Voltage)2 | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
Applications
- SMPS Synchronous Rectification
- DC/DC Converters
- Or-ing
Package Dimensions
PRPAK5X6
2410121656_HUASHUO-HSBA4094_C701051.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
