High Cell Density N Channel MOSFET HUASHUO HSU16N25 with 250V Drain Source Voltage and Excellent RDS
Key Attributes
Model Number:
HSU16N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
47pF
Number:
1 N-channel
Output Capacitance(Coss):
149pF
Input Capacitance(Ciss):
1.289nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
HSU16N25
Package:
TO-252-2
Product Description
HSU16N25 N-Ch 250V Fast Switching MOSFETs
The HSU16N25 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 250 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 16 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 7.5 | A | |||
| IDM | Pulsed Drain Current2 | 65 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 140 | mJ | |||
| IAS | Avalanche Current | 16 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 35 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 3.3 | /W | ||
| Product Summary | ||||||
| VDS | 250 | V | ||||
| RDS(ON),max | 220 | 250 | m | |||
| ID | 16 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 250 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=8A | 220 | 250 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | --- | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=160V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=160V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±30V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=10V , ID=8A | 10 | --- | S | |
| Qg | Total Gate Charge (10V) | VDS=200V , VGS=10V , ID=16A | 23 | --- | nC | |
| Qgs | Gate-Source Charge | 9 | --- | |||
| Qgd | Gate-Drain Charge | 6.2 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=120V , VGS=10V , RG=25 ID=16A | 13 | --- | ns | |
| Tr | Rise Time | 30 | --- | |||
| Td(off) | Turn-Off Delay Time | 125 | --- | |||
| Tf | Fall Time | 39 | --- | |||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 1289 | --- | pF | |
| Coss | Output Capacitance | 149 | --- | |||
| Crss | Reverse Transfer Capacitance | 47 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 16 | A | |
| ISM | Pulsed Source Current2,5 | --- | 65 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=16A , TJ=25 | --- | 1.4 | V | |
| trr | Reverse Recovery Time | IF=16A , dI/dt=100A/µs , TJ=25 | 205 | --- | nS | |
| Qrr | Reverse Recovery Charge | 1.88 | --- | nC | ||
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU16N25 | TO252-2 | 2500/Tape&Reel |
2410121435_HUASHUO-HSU16N25_C845615.pdf
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