Fast Switching N Channel MOSFET HUASHUO HSBA30N20 with 200V Drain Source Voltage and Low Gate Charge
Key Attributes
Model Number:
HSBA30N20
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
30A
RDS(on):
48mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
3.49nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
49nC@10V
Mfr. Part #:
HSBA30N20
Package:
PRPAK5x6-8L
Product Description
HSBA30N20 N-Ch 200V Fast Switching MOSFETs
Product Overview
The HSBA30N20 is a high-performance N-channel MOSFET designed for fast switching applications. Featuring proprietary new trench technology, it offers a low on-resistance of 43m typ. at VGS=10V and a low gate charge to minimize switching losses. Its fast recovery body diode makes it suitable for synchronous rectification in SMPS, motor control, and hard switching high-speed circuits. With a drain-source voltage rating of 200V and a continuous drain current of 30A, this MOSFET provides reliable performance for demanding industrial applications.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Technology: Proprietary New Trench Technology
- Package Code: PRPAK5*6
- Packaging: 3000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 21 | A | |||
| IDM | Pulsed Drain Current2 | 120 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 200 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/nS | |||
| PD@TC=25 | Total Power Dissipation3 | 150 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 50 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.0 | /W | ||
| Product Summary | ||||||
| VDS | 200 | V | ||||
| RDS(ON),max | 48 | m | ||||
| ID | 30 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 43 | 48 | m | |
| VGS=4.5V , ID=20A | 50 | 60 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=200V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=160V , VGS=0V , TJ=125 | --- | --- | 100 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge | VDS=100V , VGS=10V , ID=15A | --- | 49 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | ||
| Qgd | Gate-Drain Charge | --- | 8 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=100V , VGS=10V , RG=10 ID=15A | --- | 22 | --- | ns |
| Tr | Rise Time | --- | 5.2 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 75 | --- | ns | |
| Tf | Fall Time | --- | 11 | --- | ||
| Ciss | Input Capacitance | VDS=100V , VGS=0V , f=1MHz | --- | 3490 | --- | pF |
| Coss | Output Capacitance | --- | 13 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 86 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 30 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 120 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 117 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 333 | --- | nC | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
5. The source current is equivalent to the drain current.
2411061706_HUASHUO-HSBA30N20_C42376806.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
