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quality Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications factory
quality Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications factory

Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications

Key Attributes
Model Number: IRLML6401
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,4.9A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
151pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.2nF@15V
Pd - Power Dissipation:
1.31W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
IRLML6401
Package:
SOT-23
Product Description

Product Overview

The IRLML6401 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi (implied by URL)
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 20V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Package: SOT-23

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12 V
ID@TA=25 Continuous Drain Current, VGS @ -4.5V1 -4.9 A
ID@TA=70 Continuous Drain Current, VGS @ -4.5V1 -3.9 A
IDM Pulsed Drain Current2 -14 A
PD@TA=25 Total Power Dissipation3 1.31 W
PD@TA=70 Total Power Dissipation3 0.84 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 120 /W
RJA Thermal Resistance Junction-Ambient1 (t ≤10s) --- 95 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.014 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-4.9A --- 45 m
VGS=-2.5V , ID=-3.4A --- 60 m
VGS=-1.8V , ID=-2A --- 85 m
VDS=-20 V 40 45 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 --- -1.0 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient 3.95 --- mV/
IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25 --- -1 uA
VDS=-16V , VGS=0V , TJ=55 --- -5 uA
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A 12.8 --- S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A 10.2 14.3 nC
Qgs Gate-Source Charge 1.89 2.6 nC
Qgd Gate-Drain Charge 3.1 4.3 nC
td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A 5.6 11.2 ns
tr Rise Time 40.8 73 ns
td(off) Turn-Off Delay Time 33.6 67 ns
tf Fall Time 18 36 ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 857 1200 pF
Coss Output Capacitance 114 160 pF
Crss Reverse Transfer Capacitance 108 151 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- -4.9 A
ISM Pulsed Source Current2,4 --- -14 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1 V
trr Reverse Recovery Time IF=-3A , di/dt=100A/µs , TJ=25 21.8 --- nS
Qrr Reverse Recovery Charge 6.9 --- nC
Ordering Information
Part Number Package code Packaging
IRLML6401 SOT-23 3000/Tape&Reel

2410121655_HUASHUO-IRLML6401_C518776.pdf
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