power conversion P channel MOSFET HUASHUO HSBA3119 featuring trench technology and high cell density
Key Attributes
Model Number:
HSBA3119
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.21nF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
12.7nF@15V
Gate Charge(Qg):
210nC@10V
Mfr. Part #:
HSBA3119
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3119 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -130 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -81 | A | ||
| IDM | Pulsed Drain Current | -510 | A | ||
| EAS | Single Pulse Avalanche Energy | 1050 | mJ | ||
| IAS | Avalanche Current | -75 | A | ||
| PD@TC=25 | Total Power Dissipation | 110 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-ambient (t≤10S) | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient (Steady State) | 62 | /W | ||
| RJC | Thermal Resistance Junction-case | 1.5 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=-250uA) | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-10V , ID=-30A) | 2.0 | 2.7 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-4.5V , ID=-20A) | 2.8 | 3.6 | mΩ | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =-250uA) | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current (VDS=-30V , VGS=0V , TJ=25) | -1 | μA | ||
| IDSS | Drain-Source Leakage Current (VDS=-30V , VGS=0V , TJ=125) | -100 | μA | ||
| IGSS | Gate-Source Leakage Current (VGS=±20V , VDS=0V) | ±100 | nA | ||
| Rg | Gate resistance (VDS=0V , VGS=0V , f=1MHz) | 1.8 | Ω | ||
| Qg | Total Gate Charge (-10V) (VDS=-15V , VGS=-10V , ID=-20A) | 210 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | |||
| Qgd | Gate-Drain Charge | 3.3 | |||
| Td(on) | Turn-On Delay Time (VDD=-15V , VGS=-10V , RG=3Ω, ID=-10A) | 17 | ns | ||
| Tr | Rise Time | 6 | |||
| Td(off) | Turn-Off Delay Time | 21 | ns | ||
| Tf | Fall Time | 39 | |||
| Ciss | Input Capacitance (VDS=-15V , VGS=0V , f=1MHz) | 12700 | pF | ||
| Coss | Output Capacitance | 1380 | |||
| Crss | Reverse Transfer Capacitance | 1210 | |||
| IS | Continuous Source Current (VG=VD=0V , Force Current) | -130 | A | ||
| VSD | Diode Forward Voltage (VGS=0V , IS=-20A , TJ=25) | -1.2 | V | ||
| trr | Reverse Recovery Time (IF=-20A , di/dt=100A/µs , TJ=25) | 37 | nS | ||
| Qrr | Reverse Recovery Charge | 30 | nC |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3119 | PRPAK5*6 | 3000/Tape&Reel |
2410122026_HUASHUO-HSBA3119_C22359241.pdf
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