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quality Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full reliability approval factory
quality Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full reliability approval factory

Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full reliability approval

Key Attributes
Model Number: HSBB3909
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A;27A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
234pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
2.213nF@15V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
HSBB3909
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3909 is a series of high-performance complementary N-channel and P-channel Fast Switching MOSFETs featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. They are designed with advanced high cell density Trench technology and meet RoHS and Green Product requirements. The series is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSBB3909
  • Certifications: RoHS, Green Device Available
  • Technology: Advanced high cell density Trench technology
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

General Features

Parameter Rating Units N-Ch P-Ch
Drain-Source Voltage (VDS) 30 V ✓ ✓
Gate-Source Voltage (VGS) 20 V ✓ ✓
Continuous Drain Current, VGS @ 10V (ID@TC=25) 24 A ✓ ✓
Continuous Drain Current, VGS @ 10V (ID@TC=70) 19 A ✓ ✓
Pulsed Drain Current (IDM) 60 A ✓ ✓
Single Pulse Avalanche Energy (EAS) 22 / 72 mJ N-Ch P-Ch
Avalanche Current (IAS) 21 / -38 A N-Ch P-Ch
Total Power Dissipation (PD@TC=25) 20 W ✓ ✓
Storage Temperature Range (TSTG) -55 to 150 ✓ ✓
Operating Junction Temperature Range (TJ) -55 to 150 ✓ ✓

Thermal Data

Parameter Conditions Typ. Max. Units
Thermal Resistance Junction-Ambient (RJA) 1 --- 62.5 /W
Thermal Resistance Junction-Case (RJC) 1 --- 6 /W

N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- --- 20 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=20V , VGS=4.5V , ID=10A --- 7.2 --- nC
Td(on) Turn-On Delay Time VDD=12V , VGS=10V , RG=3.3, ID=5A --- 4.1 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 572 --- pF

P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-8A --- 13 18 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=-15V , VGS=-4.5V , ID=-8A --- 22 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-1A --- 32 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 2213 --- pF

Diode Characteristics

Symbol Parameter Conditions Typ. Max. Units
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- 1.2 V

Package Outline Dimensions

PRPAK3X3


2410121517_HUASHUO-HSBB3909_C7543695.pdf

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