High cell density trench technology MOSFET HUASHUO HSM2202 dual N channel 20V fast switching device
Key Attributes
Model Number:
HSM2202
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
2 N-Channel
Output Capacitance(Coss):
900pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
HSM2202
Package:
SOP-8
Product Description
Product Overview
The HSM2202 is a dual N-channel 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM2202 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 8 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 6 | A | |||
| Pulsed Drain Current (IDM) | 32 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.25 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 100 | /W | ||||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=8A | 9.5 | 12 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V, ID=6A | 12 | 15 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 0.5 | 0.7 | 1.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=20V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=20V, VGS=0V, TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=6A | 10 | S | |||
| Total Gate Charge (Qg) | VDS=10V, VGS=4.5V, ID=8A | 16 | nC | |||
| Gate-Source Charge (Qgs) | 1.6 | nC | ||||
| Gate-Drain Charge (Qgd) | 2.9 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=10V, VGEN=4.5V, RGEN=3, ID=8A, RL=10 | 4.5 | ns | |||
| Rise Time (Tr) | 9.4 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 19 | ns | ||||
| Fall Time (Tf) | 3.5 | ns | ||||
| Input Capacitance (Ciss) | VDS=10V, VGS=0V, f=1MHz | 900 | pF | |||
| Output Capacitance (Coss) | 164 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 100 | pF |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM2202 | SOP-8 | 4000/Tape&Reel |
2409272232_HUASHUO-HSM2202_C2828490.pdf
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