High Frequency Switching MOSFET HUASHUO HSP100N15 with 150V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
HSP100N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
100A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF
Number:
1 N-channel
Output Capacitance(Coss):
401pF
Pd - Power Dissipation:
178W
Input Capacitance(Ciss):
5.88nF
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HSP100N15
Package:
TO-220
Product Description
Product Overview
The HSP100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage rating and a low on-resistance (RDS(ON)) of 7.3 m typ. This MOSFET utilizes advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. It is available as a Green Device and is suitable for applications such as motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSP100N15 | Drain-Source Voltage (VDS) | 150 | V | ||||
| Gate-Source Voltage (VGS) | 20 | V | |||||
| Continuous Drain Current (ID) @ TC=25 | VGS @ 10V | 1,6 | 100 | A | |||
| Continuous Drain Current (ID) @ TC=100 | VGS @ 10V | 1,6 | 63 | A | |||
| Pulsed Drain Current (IDM) | 2 | 400 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 3 | 785 | mJ | ||||
| Avalanche Current (IAS) | 56 | A | |||||
| Total Power Dissipation (PD) @ TC=25 | 4 | 178 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 60 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1 | --- | 0.7 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | --- | --- | V | ||
| HSP100N15 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | 2 | --- | 7.3 | 9 | m |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=125 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | ||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.9 | --- | |||
| Total Gate Charge (Qg) (10V) | VDS=75V , VGS=10V , ID=20A | --- | 100 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 25 | --- | ||||
| Gate-Drain Charge (Qgd) | --- | 31 | --- | ||||
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=1A | --- | 32 | --- | ns | ||
| Rise Time (Tr) | --- | 25 | --- | ns | |||
| HSP100N15 | Turn-Off Delay Time (Td(off)) | --- | 98 | --- | ns | ||
| Fall Time (Tf) | --- | 89 | --- | ns | |||
| Input Capacitance (Ciss) | VDS=75V , VGS=0V , f=1MHz | --- | 5880 | --- | pF | ||
| Output Capacitance (Coss) | --- | 401 | --- | pF | |||
| HSP100N15 | Reverse Transfer Capacitance (Crss) | --- | 9.5 | --- | pF | ||
| HSP100N15 | Continuous Source Current (IS) | VG=VD=0V , Force Current | 1,5 | --- | --- | 100 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 2 | --- | --- | 1.2 | V |
Applications
- MOTOR Driver
- BMS (Battery Management System)
- High frequency switching and synchronous rectification
Key Features
- 100% EAS Guaranteed
- Green Device Available
- Super Low RDS(ON)
- Advanced high cell density Trench technology
2410121637_HUASHUO-HSP100N15_C2903572.pdf
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