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quality High Cell Density Trench N Channel MOSFET HUASHUO HSS3402A Suitable for Load Switch Applications factory
quality High Cell Density Trench N Channel MOSFET HUASHUO HSS3402A Suitable for Load Switch Applications factory

High Cell Density Trench N Channel MOSFET HUASHUO HSS3402A Suitable for Load Switch Applications

Key Attributes
Model Number: HSS3402A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
34mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
18pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
234pF@15V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
HSS3402A
Package:
SOT-23
Product Description

Product Overview

The HSS3402A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It features super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology.

Product Attributes

  • Brand: HSS
  • Product Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±12 V
ID@TA=25 Continuous Drain Current, VGS @ 4.5V 4 A
ID@TA=70 Continuous Drain Current, VGS @ 4.5V 3.5 A
IDM Pulsed Drain Current 16 A
PD@TA=25 Total Power Dissipation 0.8 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient --- 145 /W
RJC Thermal Resistance Junction-Case --- 78 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.029 --- V/
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=4A 34 45 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=3.5A 39 50 m
RDS(ON) Static Drain-Source On-Resistance VGS=2.5V , ID=3A 50 65 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 1 1.6 V
VGS(th) VGS(th) Temperature Coefficient --- -2.82 --- mV/
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=3A --- 33 --- S
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 4.6 --- nC
Qgs Gate-Source Charge --- 0.98 ---
Qgd Gate-Drain Charge --- 1.8 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=3A --- 3.2 --- ns
Tr Rise Time --- 1.9 --- ns
Td(off) Turn-Off Delay Time --- 17 --- ns
Tf Fall Time --- 2.6 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 234 --- pF
Coss Output Capacitance --- 36 --- pF
Crss Reverse Transfer Capacitance --- 18 --- pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current --- --- 4 A
ISM Pulsed Source Current --- --- 16 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
Ordering Information
Part Number Package code Packaging
HSS3402A SOT-23 3000/Tape&Reel

2409291134_HUASHUO-HSS3402A_C518793.pdf

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