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quality Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance factory
quality Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance factory

Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance

Key Attributes
Model Number: HSBL020N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
240A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
580pF
Number:
1 N-channel
Pd - Power Dissipation:
225W
Input Capacitance(Ciss):
13.65nF
Gate Charge(Qg):
204nC@10V
Mfr. Part #:
HSBL020N08
Package:
TOLL
Product Description

Product Overview

The HSBL020N08 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous rectification. This product meets RoHS and Halogen-Free compliant requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Compliance: RoHS, Halogen-Free
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
  • Technology: Advanced high cell density Trench technology
  • Device Type: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 80 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 240 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 100 A
IDM Pulsed Drain Current2 730 A
EAS Single Pulse Avalanche Energy3 2500 mJ
PD@TC=25 Total Power Dissipation4 225 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.54 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=50A 1.4 2.0 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- 1 uA
VDS=80V , VGS=0V , TJ=125 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2
Qg Total Gate Charge (10V) VDS=40V , VGS=10V , ID=50A 204 --- nC
Qgs Gate-Source Charge 54 ---
Qgd Gate-Drain Charge 47 ---
Td(on) Turn-On Delay Time VDD=40V , VGS=10V , RL=3, ID=20A 39 --- ns
Tr Rise Time 136 ---
Td(off) Turn-Off Delay Time 121 ---
Tf Fall Time 156 ---
Ciss Input Capacitance VDS=45V , VGS=0V , f=1MHz 13650 --- pF
Coss Output Capacitance 20100 ---
Crss Reverse Transfer Capacitance 580 ---
Diode Characteristics
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 0.85 1.2 V
Trr Body Diode Reverse Recovery Time IF=30A, DI/dt=500A/us 112 --- ns
Qrr Body Diode Reverse Recovery charge IF=30A, DI/dt=500A/us 313 --- nC

2410121434_HUASHUO-HSBL020N08_C2987723.pdf
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