100V N Channel MOSFET HUASHUO HSU0026 Designed for Fast Switching and Synchronous Buck Applications
Key Attributes
Model Number:
HSU0026
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.93nF@15V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
HSU0026
Package:
TO-252
Product Description
HSU0026 N-Ch 100V Fast Switching MOSFETs
The HSU0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Features: Green Device Available, Super Low Gate Charge, Excellent Cdv/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 40 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 22 | A | |||
| IDM | Pulsed Drain Current2 | 75 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 16 | mJ | |||
| IAS | Avalanche Current | 18 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 62.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t<=10S) | --- | 50 | /W | ||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.08 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=9A | 16 | 22 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=7A | 20 | 28 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -5.5 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | 10 | µA | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | --- | 100 | nA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=9A | 28 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | --- | Ω | |
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=7A | 36 | --- | nC | |
| Qgs | Gate-Source Charge | 5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 10 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3Ω ID=7A | 11.5 | --- | ns | |
| tr | Rise Time | 29 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 42 | --- | ns | ||
| tf | Fall Time | 18 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1930 | --- | pF | |
| Coss | Output Capacitance | 245 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 125 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 40 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=7A , dI/dt=100A/µs , TJ=25 | 48 | --- | ns | |
| Qrr | Reverse Recovery Charge | 29 | --- | nC | ||
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU0026 | TO-252 | 2500/Tape&Reel |
2410121642_HUASHUO-HSU0026_C701009.pdf
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