High cell density trench N channel MOSFET HUASHUO HSBB3016 optimized for synchronous buck converter and RoHS compliance
Key Attributes
Model Number:
HSBB3016
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.6mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
115pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.875nF@15V
Pd - Power Dissipation:
43.4W
Gate Charge(Qg):
39.6nC@10V
Mfr. Part #:
HSBB3016
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 24 | A | |||
| IDM | Pulsed Drain Current2 | 120 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 144.7 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 43.4 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 1.67 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 75 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 2.88 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 3.4 | 4 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=15A | 4.6 | 6 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | S | ||
| Qg | Total Gate Charge (10V) | VDS=15V , VGS=10V , ID=20A | 39.6 | nC | ||
| Qg | Total Gate Charge (4.5V) | 19 | nC | |||
| Qgs | Gate-Source Charge | 6 | nC | |||
| Qgd | Gate-Drain Charge | 10 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=1.5 ID=20A | 10 | ns | ||
| Tr | Rise Time | 22 | ns | |||
| Td(off) | Turn-Off Delay Time | 49 | ns | |||
| Tf | Fall Time | 7.8 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2875 | pF | ||
| Coss | Output Capacitance | 400 | pF | |||
| Crss | Reverse Transfer Capacitance | 115 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 30 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB3016 | PRPAK3*3 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=53.8A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121655_HUASHUO-HSBB3016_C508822.pdf
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