P channel MOSFET HUASHUO HSM05P15 offering 150V drain source voltage and low gate charge for control
Key Attributes
Model Number:
HSM05P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
345mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 P-Channel
Output Capacitance(Coss):
2.021nF
Input Capacitance(Ciss):
2.021nF@50V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
HSM05P15
Package:
SOP-8
Product Description
Product Overview
The HSM05P15 is a P-channel MOSFET featuring 150V drain-source voltage and fast switching capabilities. It utilizes advanced trench MOSFET technology to achieve excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM05P15 | Drain-Source Voltage (VDS) | -150 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | TC=25, VGS @ -10V | -5 | A | |||
| Continuous Drain Current (ID) | TC=100, VGS @ -10V | -3 | A | |||
| Continuous Drain Current (ID) | TA=25, VGS @ -10V | -2 | A | |||
| Continuous Drain Current (ID) | TA=100, VGS @ -10V | -1.4 | A | |||
| Pulsed Drain Current (IDM) | -8 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 73 | mJ | ||||
| Total Power Dissipation (PD) | TA=25 | 3 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 45 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 30 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -150 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V, ID=-2A | 290 | 345 | m | ||
| HSM05P15 | Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -2 | -2.7 | -4 | V |
| Drain-Source Leakage Current (IDSS) | VDS=-150V, VGS=0V, TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=-10V, ID=-2A | 10 | S | |||
| Gate Resistance (Rg) | VGS=0V, VDS=0V, f=1.0MHz | 5 | ||||
| Total Gate Charge (Qg) | VDS=-50V, VGS=-10V, ID=-2A | 39 | nC | |||
| Gate-Source Charge (Qgs) | 8.1 | nC | ||||
| Gate-Drain Charge (Qgd) | 9.5 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=-50V, VGS=-10V, RG=3.3, ID=-2A | 33 | ns | |||
| Rise Time (Tr) | 27 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 250 | ns | ||||
| HSM05P15 | Fall Time (Tf) | 130 | ns | |||
| Input Capacitance (Ciss) | VDS=-50V, VGS=0V, f=1MHz | 2021 | pF | |||
| Output Capacitance (Coss) | 44 | pF | ||||
| HSM05P15 | Reverse Transfer Capacitance (Crss) | 37 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | -5 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | |||
| HSM05P15 | Reverse Recovery Time (trr) | IF=-2A, di/dt=-100A/s, TJ=25 | 35 | nS | ||
| HSM05P15 | Reverse Recovery Charge (Qrr) | 32 | nC |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSM05P15 | SOP-8 | Tape&Reel | 2500 |
2410122016_HUASHUO-HSM05P15_C22359230.pdf
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