Fast switching dual P channel MOSFET HUASHUO HSM3303 30V with excellent CdV dt effect and RoHS compliance
Key Attributes
Model Number:
HSM3303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
221pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.883nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSM3303
Package:
SOP-8
Product Description
Product Overview
The HSM3303 is a dual P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Model | Description | Rating | Units |
|---|---|---|---|
| HSM3303 | Drain-Source Voltage (VDS) | -30 | V |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Continuous Drain Current (ID @ TA=25, -VGS @ -10V) | -6.5 | A | |
| Continuous Drain Current (ID @ TA=70, -VGS @ -10V) | -5.2 | A | |
| Pulsed Drain Current (IDM) | -26 | A | |
| Single Pulse Avalanche Energy (EAS) | 72.2 | mJ | |
| Avalanche Current (IAS) | -38 | A | |
| Total Power Dissipation (PD @ TA=25) | 1.5 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | 85 | /W | |
| Thermal Resistance Junction-Case (RJC) | 25 | /W | |
| Drain-Source Breakdown Voltage (BVDSS @ VGS=0V, ID=-250uA) | -30 | V | |
| Electrical Characteristics | Static Drain-Source On-Resistance (RDS(ON) @ VGS=-10V, ID=-6A) | 18 | mΩ |
| Static Drain-Source On-Resistance (RDS(ON) @ VGS=-4.5V, ID=-4A) | 28 | mΩ | |
| Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID =-250uA) | -1.0 to -2.5 | V | |
| Drain-Source Leakage Current (IDSS @ VDS=-24V, VGS=0V, TJ=25) | -1 | µA | |
| Gate-Source Leakage Current (IGSS @ VGS=±20V, VDS=0V) | ±100 | nA | |
| Total Gate Charge (Qg @ VDS=-15V, VGS=-4.5V, ID=-6A) | 12.6 | nC | |
| Input Capacitance (Ciss @ VDS=-15V, VGS=0V, f=1MHz) | 807 to 1883 | pF | |
| Output Capacitance (Coss @ VDS=-15V, VGS=0V, f=1MHz) | 117 to 272 | pF | |
| Reverse Transfer Capacitance (Crss @ VDS=-15V, VGS=0V, f=1MHz) | 95 to 221 | pF | |
| Continuous Source Current (IS @ VG=VD=0V) | -6.5 | A | |
| Diode Characteristics | Diode Forward Voltage (VSD @ VGS=0V, IS=-1A, TJ=25) | -1.2 | V |
| Reverse Recovery Time (trr @ IF=-6A, dI/dt=100A/µs, TJ=25) | 16.3 | nS | |
| Reverse Recovery Charge (Qrr) | 5.9 | nC | |
| Package | SOP-8 | --- | --- |
| Packaging | 4000/Tape&Reel | --- | --- |
2409291036_HUASHUO-HSM3303_C508458.pdf
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