ESD protected dual N channel MOSFET HUASHUO HSCC8211 suitable for lithium ion battery pack circuits
Key Attributes
Model Number:
HSCC8211
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
81pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
735pF@10V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
10.6nC@4.5V
Mfr. Part #:
HSCC8211
Package:
DFN-6-EP(3x2)
Product Description
Product Overview
The HSCC8211 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. This device is particularly suitable for Lithium-ion battery pack applications. It meets RoHS and Green Product requirements, offering full functional reliability.
Product Attributes
- Brand: HS-Semi
- Model: HSCC8211
- Technology: Trenched N-CH MOSFETs
- Certifications: RoHS, Green Device Available
- Protection: ESD Protected Embedded
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 20 | V | |||
| VGS (Gate-Source Voltage) | 12 | V | |||
| ID@TA=25 (Continuous Drain Current, VGS @ 4.5V) | 8 | A | |||
| ID@TA=70 (Continuous Drain Current, VGS @ 4.5V) | 6.4 | A | |||
| IDM (Pulsed Drain Current) | 50 | A | |||
| PD@TA=25 (Total Power Dissipation) | 1.56 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-Ambient) | (t 10s) | 80 | /W | ||
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V , ID=2A | 7 | 9 | 13 | m |
| VGS=4.0V , ID=2A | 7.5 | 9.5 | 13.5 | m | |
| VGS=3.7V , ID=2A | 8 | 10 | 14.5 | m | |
| VGS=3.1V , ID=2A | 8.5 | 11 | 16.5 | m | |
| VGS=2.5V , ID=2A | 9.5 | 12.5 | 20 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 0.5 | 1.2 | V | |
| IDSS (Drain-Source Leakage Current) | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS (Drain-Source Leakage Current) | VDS=16V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=8V , VDS=0V | 10 | uA | ||
| gfs (Forward Transconductance) | VDS=5V , ID=4A | 32 | S | ||
| Qg (Total Gate Charge) | VDS=15V , VGS=4.5V , ID=3A | 10.6 | nC | ||
| Qgs (Gate-Source Charge) | 2.2 | ||||
| Qgd (Gate-Drain Charge) | 4.1 | ||||
| Switching Time | Td(on) (Turn-On Delay Time) VDD=15V , VGS=4.5V , RG=6 ID=3A | 7 | ns | ||
| Tr (Rise Time) | 36 | ns | |||
| Td(off) (Turn-Off Delay Time) | 46.5 | ns | |||
| Tf (Fall Time) | 15 | ns | |||
| Capacitance | Ciss (Input Capacitance) VDS=10V , VGS=0V , f=1MHz | 735 | pF | ||
| Coss (Output Capacitance) | 83 | ||||
| Crss (Reverse Transfer Capacitance) | 81 | ||||
| Diode Characteristics | |||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | 8 | A | ||
| ISM (Pulsed Source Current) | 50 | A | |||
| VSD (Diode Forward Voltage) | VGS=0V , IS=8.0A , TJ=25 | 1.2 | V | ||
2410121532_HUASHUO-HSCC8211_C700969.pdf
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