High cell density trench technology p channel mosfet hsba6115 fast switching 60v for power conversion
Key Attributes
Model Number:
HSBA6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.635nF@15V
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSBA6115
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6115 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBA6115 | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=25 | -35 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=100 | -27 | A | |||
| Pulsed Drain Current (IDM) | -70 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 113 | mJ | ||||
| Avalanche Current (IAS) | 47.6 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 52.1 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 2.4 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-18A | --- | 25 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-12A | --- | 33 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V |
Note: Specific conditions and units are detailed in the table above. Refer to the provided figures for typical characteristic curves.
2410121455_HUASHUO-HSBA6115_C2903568.pdf
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