High Cell Density Dual N channel Fast Switching MOSFET HUASHUO HSCA2030 with Excellent Gate Charge Characteristics
Key Attributes
Model Number:
HSCA2030
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
56A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.8mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
325pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
3.165nF@10V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
38nC@4.5V
Mfr. Part #:
HSCA2030
Package:
DFN-8-EP(3x3)
Product Description
Product Overview
The HSCA2030 is a high-performance dual N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Its advanced high cell density trench technology contributes to super low gate charge and excellent decline of CdV/dt effect.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCA2030 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=3A | --- | 4.3 | 5.8 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=3.9V , ID=3A | --- | 4.5 | 6.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=3A | --- | 5 | 7 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=1.8V , ID=3A | --- | 7 | 11 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.4 | --- | 1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=8V , VDS=0V | --- | --- | 10 | uA | |
| Forward Transconductance (gfs) | VDS=5V , ID=3A | --- | 42 | --- | S | |
| Total Gate Charge (Qg) | VDS=10V , ID=3A (4.5V) | --- | 38 | --- | nC | |
| Total Gate Charge (Qg) | VDS=10V , ID=3A (3.9V) | --- | 33 | --- | nC | |
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | --- | --- | 3165 | pF | |
| Output Capacitance (Coss) | VDS=10V , VGS=0V , f=1MHz | --- | --- | 380 | pF | |
| HSCA2030 | Reverse Transfer Capacitance (Crss) | VDS=10V , VGS=0V , f=1MHz | --- | --- | 325 | pF |
| Diode Forward Voltage (VSD) | VGS=0V , IS=3A , TJ=25 | --- | --- | 1.2 | V | |
| General Ratings | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 8 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 4.5V | 56 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 4.5V | 35.6 | A | |||
| Thermal Data | Thermal Resistance Junction-Ambient (RJA) | --- | --- | 35 | /W | |
| Thermal Resistance Junction-Case (RJC) | --- | --- | 4 | /W |
2410121642_HUASHUO-HSCA2030_C700967.pdf
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