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quality HSBB3313 Dual P Channel MOSFET 30V Fast Switching Suitable for Battery Powered and Portable Systems factory
quality HSBB3313 Dual P Channel MOSFET 30V Fast Switching Suitable for Battery Powered and Portable Systems factory

HSBB3313 Dual P Channel MOSFET 30V Fast Switching Suitable for Battery Powered and Portable Systems

Key Attributes
Model Number: HSBB3313
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
19A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
40mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
118pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
945pF@15V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
9.6nC@4.5V
Mfr. Part #:
HSBB3313
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3313 is a dual P-channel, 30V fast switching MOSFET designed for high-efficiency applications. Featuring advanced Trench MOS Technology, these MOSFETs offer 100% EAS guaranteed performance and are available in a Green Device option. Ideal for battery-powered systems and portable equipment, the HSBB3313 provides reliable and fast switching capabilities.

Product Attributes

  • Brand: HS
  • Device Type: Dual P-Channel MOSFET
  • Technology: Advanced Trench MOS
  • Availability: Green Device Available

Technical Specifications

Product Summary
Model HSBB3313
Drain-Source Voltage (VDS) -30 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) @ TC=25 (-VGS @ -10V) -19 A
Continuous Drain Current (ID) @ TC=70 (-VGS @ -10V) -12 A
Continuous Drain Current (ID) @ TA=25 (-VGS @ -10V) -5.5 A
Continuous Drain Current (ID) @ TA=70 (-VGS @ -10V) -3.4 A
Pulsed Drain Current (IDM) -38 A
Single Pulse Avalanche Energy (EAS) 45 mJ
Avalanche Current (IAS) -30 A
Total Power Dissipation (PD) @ TC=25 21 W
Total Power Dissipation (PD) @ TA=25 1.67 W
Storage Temperature Range (TSTG) -55 to 150
Operating Junction Temperature Range (TJ) -55 to 150
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-10A --- --- 40 m
VGS=-4.5V , ID=-6A --- --- 62 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- --- -1 uA
VDS=-24V , VGS=0V , TJ=55 --- --- -5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 15 ---
Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-10A --- 9.6 --- nC
Qgs Gate-Source Charge --- 2.8 ---
Qgd Gate-Drain Charge --- 3.8 ---
Td(on) Turn-On Delay Time VDD=-24V , VGS=-10V , RG=3.3, ID=-1A --- 14.6 --- ns
Tr Rise Time --- 24.8 --- ns
Td(off) Turn-Off Delay Time --- 51 --- ns
Tf Fall Time --- 10 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 945 --- pF
Coss Output Capacitance --- 140 --- pF
Crss Reverse Transfer Capacitance --- 118 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- -19 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V
Thermal Data Rating Units
RJA (Thermal Resistance Junction-Ambient) 75 /W
RJC (Thermal Resistance Junction-Case) 6 /W

Applications

  • Battery Powered Systems
  • Portable Equipment

2410121448_HUASHUO-HSBB3313_C7543694.pdf

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