P channel MOSFET HUASHUO HSBB4113 featuring fast switching and excellent RDS ON for power circuits
Key Attributes
Model Number:
HSBB4113
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.004nF@15V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
-
Mfr. Part #:
HSBB4113
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4113 is a P-channel fast-switching MOSFET featuring high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. It is designed for high efficiency and performance in demanding power management scenarios.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBB4113 | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | -VGS @ -10V | -15 | A | |||
| Continuous Drain Current (ID@TC=100) | -VGS @ -10V | -10 | A | |||
| Pulsed Drain Current (IDM) | -46 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 37 | mJ | ||||
| Avalanche Current (IAS) | -27.2 | A | ||||
| Total Power Dissipation (PD@TC=25) | 32 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 4 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -40 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-12A | --- | 40 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V | |
| Total Gate Charge (Qg) (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6A | --- | 9 | nC | ||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | --- | 1004 | pF |
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBB4113 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | -10 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB4113 | PRPAK3*3 | 3000/Tape&Reel |
2410121655_HUASHUO-HSBB4113_C5341688.pdf
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