synchronous buck converter mosfet HUASHUO HSM3006 with low conduction resistance and high reliability
Key Attributes
Model Number:
HSM3006
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
210pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.295nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
21nC@4.5V
Mfr. Part #:
HSM3006
Package:
SOP-8
Product Description
Product Overview
The HSM3006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Its advanced high cell density trench technology ensures superior performance.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM3006 | Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 13 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 10 | A | |||
| Pulsed Drain Current (IDM) | 65 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 105.8 | mJ | ||||
| Avalanche Current (IAS) | 46 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 85 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 25 | /W | ||||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V, ID=13A | 6 | m | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | V | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 1.2 | 2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=24V, VGS=0V, TJ=25 | 1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=12A | 47 | S | |||
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, ID=10A | 21 | nC | |||
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | 2295 | pF | |||
| Output Capacitance (Coss) | 267 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 210 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | 13 | A | |||
| Pulsed Source Current (ISM) | 65 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=10A, dI/dt=100A/s, TJ=25 | 12 | nS | |||
| Reverse Recovery Charge (Qrr) | 4.8 | nC |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSM3006 | SOP-8 | Tape&Reel | 2500 |
2410121448_HUASHUO-HSM3006_C700978.pdf
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