High Cell Density Trenched MOSFET HUASHUO HSBA4006 Offering Fast Switching and Low RDS ON for Power Electronics
Key Attributes
Model Number:
HSBA4006
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.332nF@15V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
HSBA4006
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, providing an excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 45 | A | |||
| IDM | Pulsed Drain Current2 | 120 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 76 | mJ | |||
| IAS | Avalanche Current | 39 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 46 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.7 | /W | ||
| Product Summary | ||||||
| VGS=10V , ID=12A | 7.5 | m | ||||
| VGS=10V , ID=60A | A | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.034 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | --- | --- | 7.5 | m |
| VGS=4.5V , ID=10A | --- | --- | 10 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -4.96 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=12A | --- | 39 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.6 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=12A | --- | 18.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 4.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 8.2 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | --- | 14.3 | --- | ns |
| Tr | Rise Time | --- | 2.6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 77 | --- | ns | |
| Tf | Fall Time | --- | 4.8 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2332 | --- | pF |
| Coss | Output Capacitance | --- | 193 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 138 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 60 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 120 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Notes:
- 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Tested by pulsed, pulse width 300s, duty cycle 2%.
- 3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=39A.
- 4 Power dissipation is limited by 150 junction temperature.
- 5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA4006 | PRPAK5*6 | 3000/Tape&Reel |
2410121517_HUASHUO-HSBA4006_C701053.pdf
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